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| 2sc1213 transistor (npn) 2SC1213A feature power dissipation p cm : 0.4 w (tamb=25 ) collector current i cm : 0.5 a collector-base voltage v (br)cbo : 2sc1213 : 35 v 2SC1213A : 50 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics(tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage 2sc1213 2SC1213A v(br) cbo ic= 10 a , i e =0 35 50 v collector-emitter breakdown voltage 2sc1213 2SC1213A v(br) ceo i c = 1 ma , i b =0 35 50 v emitter-base breakdown voltage v(br) ebo i e =10 a, i c =0 4 v collector cut-off current i cbo v cb = 20v , i e =0 0.5 a h fe(1) v ce =3v, i c = 10ma 60 320 dc current gain h fe(2) v ce =3v, i c = 500ma 10 collector-emitter saturation voltage v ce(sat) i c = 150ma, i b = 15 ma 0.2 0.6 v base-emitter voltage v be v ce = 3v, i c = 10 ma 0.75 v classification of h fe(1) rank b c d range 60-120 100-200 160-320 1 2 3 to-92 1. emitter 2. collector 3. base 2sc1213/a http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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